| 摘要 |
PROBLEM TO BE SOLVED: To avoid lowering the yield due to breaking of a resist pattern and prevent an etching liquid flow from being blocked in the gap between thick film patterns to accurately form a desired pattern over the entire substrate, when photosensitive layers on a substrate are exposed and developed to form a mask pattern and the substrate is etched with the mask pattern to form the pattern of the same shape as that of the mask pattern on the substrate. SOLUTION: On a copper thin film 3 under etching, n photosensitive layers (N≥2) different in sensitivity are laminated so that the upper layer has the lower sensitivity with a mask pattern of an n-layer structure (e.g. a laminate structure of a thick film low sensitivity layer 9 laminated on a thin film high sensitivity layer 4) formed over those portions (e.g. around through-holes) wanted to ensure a strength endurable enough against the spray pressure of a developing solution or an etching liquid. The pattern on the upper layer is made smaller to expand the gap between the patterns, thereby preventing the flow of the developing solution or the etching liquid from being blocked. COPYRIGHT: (C)2005,JPO&NCIPI |
