发明名称 |
REFERENCE SAMPLE FOR ELEMENT MAPPING OF TRANSMISSION ELECTRON MICROSCOPE AND ELEMENT MAPPING METHOD FOR TRANSMISSION ELECTRON MICROSCOPE USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a reference sample for element mapping of a transmission electron microscope, capable of being used for compensating results of SEM, EDS and EELS mappings of a multilayer nano thin film and capable of optimizing mapping conditions, and to provide an element mapping method for the transmission electron microscope using the reference sample. SOLUTION: The reference sample is composed of a substrate 10; a first crystalline thin film 11 which includes heavy atoms and is formed on the substrate 10; a first amorphous thin film 12 which includes oxide or nitride containing light atoms and is formed on the first crystalline thin film 11 so that its film thickness is 1 to 5 nm; and second crystalline thin film 11' which includes heavy atoms and is formed on the first amorphous thin film 12. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005201905(A) |
申请公布日期 |
2005.07.28 |
申请号 |
JP20050008509 |
申请日期 |
2005.01.17 |
申请人 |
SAMSUNG ELECTRONICS CO LTD;HITACHI LTD;HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
PARK GYEONG-SU;KAJI KAZUTOSHI;PARK JONG-BONG;TERADA SHOHEI;HIRANO TATSUMI;SO SEAN |
分类号 |
G01N23/04;G01N1/28;G01N23/08;G01N33/04;H01J37/26;(IPC1-7):G01N23/04 |
主分类号 |
G01N23/04 |
代理机构 |
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