发明名称 REFERENCE SAMPLE FOR ELEMENT MAPPING OF TRANSMISSION ELECTRON MICROSCOPE AND ELEMENT MAPPING METHOD FOR TRANSMISSION ELECTRON MICROSCOPE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a reference sample for element mapping of a transmission electron microscope, capable of being used for compensating results of SEM, EDS and EELS mappings of a multilayer nano thin film and capable of optimizing mapping conditions, and to provide an element mapping method for the transmission electron microscope using the reference sample. SOLUTION: The reference sample is composed of a substrate 10; a first crystalline thin film 11 which includes heavy atoms and is formed on the substrate 10; a first amorphous thin film 12 which includes oxide or nitride containing light atoms and is formed on the first crystalline thin film 11 so that its film thickness is 1 to 5 nm; and second crystalline thin film 11' which includes heavy atoms and is formed on the first amorphous thin film 12. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005201905(A) 申请公布日期 2005.07.28
申请号 JP20050008509 申请日期 2005.01.17
申请人 SAMSUNG ELECTRONICS CO LTD;HITACHI LTD;HITACHI HIGH-TECHNOLOGIES CORP 发明人 PARK GYEONG-SU;KAJI KAZUTOSHI;PARK JONG-BONG;TERADA SHOHEI;HIRANO TATSUMI;SO SEAN
分类号 G01N23/04;G01N1/28;G01N23/08;G01N33/04;H01J37/26;(IPC1-7):G01N23/04 主分类号 G01N23/04
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