| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a ferroelectric thin film made of vinylidene fluoride homopolymer having I type crystal structure applicable to various types of base materials by using relatively easy and simple procedures (a coating condition, technique, or the like). SOLUTION: The method for forming the ferroelectric thin film made of the vinylidene fluoride homopolymer comprises: (i) a step of subjecting a vinylidene fluoride to radical polymerization in the presence of a radical polymerization initiator to prepare a raw powder of the vinylidene fluoride homopolymer having I type crystal structure as a sole or main structure thereof; (ii) a step of forming a thin film on a base material surface by using the vinylidene fluoride homopolymer having I type crystal structure as a sole or main structure thereof which is prepared from the above raw powder of the vinylidene fluoride homopolymer, and (iii) a step comprising subjecting the thin film of the vinylidene fluoride homopolymer formed in the step (ii) to polarization treatment. COPYRIGHT: (C)2005,JPO&NCIPI
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