Magnetic memory device and manufacturing method thereof

摘要

A magnetic memory device exhibits improved writing characteristics by providing a magnetic flux concentrator which efficiently applies the magnetic field, which is generated by the writing word line, to the memory layer of the TMR element. The magnetic memory device ( 1 ) is composed of the TMR element ( 13 ), the writing word line (the first wiring) ( 11 ) which is electrically insulated from the TMR element ( 13 ), and the bit line (the second wiring) ( 12 ) which is electrically connected to the TMR element ( 13 ) and intersecting three-dimensionally with the writing word line ( 11 ), with the TMR element ( 13 ) interposed therebetween. The magnetic memory device ( 1 ) is characterized as follows. The magnetic flux concentrator ( 51 ) of high-permeability layer is formed along at least the lateral sides of the writing word line ( 11 ) and the side of the writing word line ( 11 ) which is opposite to the side facing the TMR element ( 13 ). At least either of the side walls of the magnetic flux concentrator ( 51 ) projects from the writing word line ( 11 ) toward the TMR element ( 11 ).