| 摘要 |
A semiconductor device has at least one high-voltage and low-voltage transistor on a single substrate. The reliability of the high-voltage transistor is enhanced by performing a LDD implantation in only the high-voltage transistor prior to conducting an oxidation process to protect the substrate and gate electrode. After the oxidation process is performed, the low-voltage transistor is subjected to an LDD implantation process. The resultant semiconductor device provides a high-voltage transistor having a deeper LDD region junction depth than the low-voltage transistor, ensuring reliability and performance.
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