| 摘要 |
A power switch comprising a field effect transistor (FET) including an active area in a semiconductor body, a channel formed in said active area and having a periodic structure, source diffusion zones and drain diffusion zones in the active area, a source diffusion zone being separated from a drain diffusion zone by a half period of the periodic structure of the channel, and each source diffusion zone having a source contact, and each drain diffusion zone having a drain contact. The source contacts and the drain contacts are aligned in a row in a direction transverse to the plane of symmetry of the channel. Current paths have substantially the same series resistance between a source contact and a drain contact associated with a source diffusion zone and a drain diffusion zone which alternate with each other. The ESD-robust power switch is very compact and suited for high voltages.
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