| 摘要 |
A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t 1 , of the insulation film, thickness, t 2 , of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S<(2t 1 +2t 2 ).
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