| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure that has improved high-speed properties as a field effect transistor and has high a parasitic resistance reduction effect. SOLUTION: In a channel, a part located under a gate 18 that is the middle section of the channel between a source 16 and a drain 17 is composed of a quantum wire 12. The channels between the source side end of the quantum wire channel 12 and the source 16, and between the drain side end and the drain 17 are composed of channels composed of quantum well layers 23 of widening sections 22 widened as compared with the width dimension of the quantum wire 12. COPYRIGHT: (C)2005,JPO&NCIPI |
