发明名称 METHOD FOR FORMING VIA HOLE OF MULTILAYER STRUCTURE COMPONENT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming the via hole of a multilayer structure component in which the via hole having a desired fine hole diameter can be formed in an insulating layer which is thick enough to have sufficient withstand voltage reliability. SOLUTION: In the method for forming the via hole, a 1st photosensitive insulating material sheet 31 is laminated on a base substrate 2 and a 1st conductor 4, and an unsintered 1st via hole 71 is formed therein by exposure and development and then sintered to form a 1st sintered insulating film 33. Then a 2nd photosensitive insulating material sheet 32 is laminated thereupon, and an unsindered 2nd via hole 72 is formed therein by exposure and development and then sintered to form a 2nd sintered insulating film 34. Consequently, an inter-conductor insulating layer 3 is formed which has a via hole 7 with a high aspect ratio. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005203710(A) 申请公布日期 2005.07.28
申请号 JP20040010991 申请日期 2004.01.19
申请人 MURATA MFG CO LTD 发明人 MARUKAMI KANJI
分类号 H01F41/04;H05K3/46;(IPC1-7):H05K3/46 主分类号 H01F41/04
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