| 摘要 |
PROBLEM TO BE SOLVED: To provide a surge protection device the holding current characteristics, in short, the transient current capacity of which are enhanced. SOLUTION: The surge protection device is configured with at least a first semiconductor region provided on a first principal side 1 of a first conduction type semiconductor substrate and whose conduction type is opposite to the first conduction type, a second semiconductor region of the first conduction type provided to the surface of the first semiconductor region, a first conductive electrode in contact with the first semiconductor region and the second semiconductor region, a third semiconductor region of the opposite conduction type provided to the first principal side apart from the first semiconductor region, a second conductive electrode provided and tangent to the third semiconductor region, a fifth semiconductor region provided on the first principal side between the first and third semiconductor regions, and an electric connection means for electrically connecting the fifth semiconductor region to the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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