FABRICATION PROCESS OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing diffusion of barrier metal into an interlayer dielectric and to provide its fabrication process. SOLUTION: The fabrication process of a semiconductor device comprises a step (S104) for forming a porous insulation film 120 employing an insulating material on a substrate 100, a step (S108) for forming an opening 150 in the porous insulation film 120, a compound film forming step (S110) for forming an SiCH film 160 containing Si, C and H on the inner surface of the opening 150 formed by the opening forming step (S108), and a barrier metal film forming step (S114) for forming a barrier metal film 170 employing a barrier metal material in the opening 150 where the SiCH film 160 is formed on the inner surface by the compound film forming step. COPYRIGHT: (C)2005,JPO&NCIPI