| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device intended to be miniaturized, a hetero-junction bipolar transistor, and its manufacturing method. SOLUTION: The semiconductor device has a single crystal region having a single crystal structure, a non-single crystal region having no single crystal structure adjacent to the single crystal region, and a crystal layer formed by crystal growth on the upper surface of a region defined by the single crystal region and the non-single crystal region. Both regions are formed on a semiconductor substrate. The single crystal region is formed in a convex shape, projecting larger than the non-single crystal region. The hetero-junction transistor is structured such that a base opening region having a single crystal structure and an insulating region having no single crystal structure are formed adjacently on a semiconductor substrate, and a base region and a base lead-out electrode region are formed by crystal growth on the upper surface of a region defined by the base opening region and the insulating region. The base opening region is formed in a convex shape, projecting larger than the insulating region. COPYRIGHT: (C)2005,JPO&NCIPI
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