| 摘要 |
PROBLEM TO BE SOLVED: To provide a die bonder wherein a chip temperature is much more faster increased. SOLUTION: A stem is heated up to the melting point of AuSn under an N2 atmosphere. Power is applied to a heater of a collet, and infrared ray is applied to a heat conduction plate tangent to the lower face of the chip adsorbed to the stem and the collet to heat up the heat conduction plate. When the temperature of the chip reaches a temperature in excess of the melting point of a die bond agent, application of the infrared ray is stopped, the heat conduction plate is escaped and the collet is descended to press the chip. COPYRIGHT: (C)2005,JPO&NCIPI |
