| 摘要 |
A first interlayer insulation film is formed, on which a SiO<SUB>2 </SUB>cap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiO<SUB>2 </SUB>cap film is preformed by heat treatment. Then, an Al<SUB>2</SUB>O<SUB>3 </SUB>film is formed on the SiO<SUB>2 </SUB>cap film. Subsequently, heat treatment is performed on the Al<SUB>2</SUB>O<SUB>3 </SUB>in an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the Al<SUB>2</SUB>O<SUB>3 </SUB>film, a platinum film, a PLZT film, and an IrO<SUB>2 </SUB>film are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.
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