| 摘要 |
A nonvolatile semiconductor memory device is disclosed that comprises plural sectors each including a memory cell array, plural word line drivers provided in each one of the sectors to drive respective word lines, and sector switches provided one for each sector. The sector switches are connected to the plural word line drivers in the corresponding sector, adapted to provide a negative voltage to be applied to the word lines to the plural word line drivers when the corresponding sector is selected for an erase operation. The sector switches only include transistors directly connected to an output signal line to provide the negative voltage to the word line drivers. A decoding circuit shared by one or more sectors is adapted to control the sector switches to allow a sector switch in a selected sector to output the negative voltage and allow a sector switch in an unselected sector to output a voltage different from the negative voltage.
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