发明名称 |
Method for producing silicon single crystal and, silicon single crystal and silicon wafer |
摘要 |
The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of <110>
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申请公布号 |
US2005160966(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20040510695 |
申请日期 |
2004.10.08 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
FUSEGAWA IZUMI;OKUNI SADAYUKI;MITAMURA NOBUAKI;OHTA TOMOHIKO;KATUOKA NOBUO |
分类号 |
C30B15/00;C30B15/36;C30B29/06;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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