发明名称 |
HIGH PURITY SILICON CARBIDE ARTICLES AND METHODS |
摘要 |
A high purity ceramic article having a typical pore size of at least about 15 µm and an active impurity concentration of less than about 400 ppm can be prepared by molding ceramic powder, sintering to vaporize any active impurity components, washing to dissolve any remaining active impurity components with an acid solution, and oxidizing to remove any residual active impurity components. |
申请公布号 |
WO2005068395(A2) |
申请公布日期 |
2005.07.28 |
申请号 |
WO2005US00183 |
申请日期 |
2005.01.05 |
申请人 |
SAINT-GOBAIN CERAMICS & PLASTICS, INC.;NARENDAR, YESHWANTH;BUCKLEY, RICHARD, F. |
发明人 |
NARENDAR, YESHWANTH;BUCKLEY, RICHARD, F. |
分类号 |
C04B35/565;C04B38/00;C04B41/50;C04B41/87;C30B25/12;C30B31/14;C30B35/00;H01L21/673 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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