METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM

摘要

Disclosed is a method for forming an organic silica film by which a coating film can be efficiently cured with a lower electron beam irradiation in a shorter time period at a lower temperature. This method for forming an organic silica film enables to form a film which can be suitably used, for example, as an interlayer insulating film in a semiconductor device and has low relative dielectric constant while being excellent in mechanical strength, adhesiveness, plasma resistance and chemical resistance. Also disclosed are a composition for forming a film which is used in this method, an organic silica film obtained by this method, a wiring structure comprising such an organic silica film, and a semiconductor device comprising such a wiring structure. The method for forming an organic silica film comprises a step wherein a coating film composed of a silicon compound having a -Si-O-Si- structure and a -Si-CH2-Si structure is formed on a base, a step for heating the coating film and a step for conducting a curing treatment by irradiating the coating film with an electron beam.