| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reflow characteristics and to realize lead-free state for exterior solder plating, in a semiconductor device having a small die pad structure. <P>SOLUTION: This semiconductor device comprises a cross die pad 1g, which supports a semiconductor chip 2 and in which an area of the region jointed to the semiconductor chip 2 is smaller than that of the rear surface 2b of the semiconductor chip 2; wires 4 connected to pads 2a of the semiconductor chip 2; a plurality of inner leads 1b, which are arranged around the semiconductor chip 2 and in which a silver plating layer 1a is formed at a wire bonding region 1j; molding part 3 for resin-sealing the semiconductor chip 2; and a plurality of outer leads 1c exposed from the molding part 3, and in which a lead-free metal layer 1m is formed on a installation surface 1l. Wherein the flat surface size of the molding part 3 is formed to be equal to or smaller than 28 mm×28 mm and the thickness thereof is formed to be 1.4 mm or smaller, and thereby the reflow characteristics can be improved and to realize lead-free state. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
