| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and its manufacturing method. <P>SOLUTION: A resin 30 is provided between a wiring substrate 10 with a wiring pattern 12 and a semiconductor chip 20 which has a plurality of electrodes 22 and is mounted on the wiring substrate 10 so that the electrode 22 comes into contact with the wiring pattern 12, and is hardened at a temperature lower than a boiling point of the resin 30 until the hardening reaction rate is 80% or more. Thereafter, the electrode 22 and the wiring pattern 12 are subjected to eutectic alloy junction. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
