发明名称 PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To restrain the falling of a resist film of an upper layer in a multilayer resist process. <P>SOLUTION: The method comprises a process for forming an application type insulating film on a processing substrate, a process for supplying a cleaning liquid to the application type thin film for cleaning the application thin film, a process for forming a photosensitive film on the application type thin film, a process for casting an energy beam on a prescribed position of the photosensitive film for forming a latent image in the photosensitive film, a process for developing the photosensitive film for forming a photosensitive film pattern based on the latent image, and a process for processing the application type insulating film by using the photosensitive film pattern as a mask. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005203563(A) 申请公布日期 2005.07.28
申请号 JP20040008290 申请日期 2004.01.15
申请人 TOSHIBA CORP 发明人 TAKEISHI TOMOYUKI;KATO HIROKAZU;ITO SHINICHI
分类号 G03F7/26;G03F7/11;G03F7/16;G03F7/38;H01L21/027;H01L21/033;H01L21/306;H01L21/311;H01L21/314 主分类号 G03F7/26
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