| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of an electronic device in which an InN crystal layer is formed as a channel layer. SOLUTION: In the electronic device, the InN crystal layer 2 is formed on a ZnO substrate 1 by epitaxial growth and an MISFET 3 (semiconductor element) is formed on the upper part of the InN crystal layer 2. Since the degree of grating mismatch between ZnO and InN is small, the InN crystal layer 2 having high crystallinity can be obtained. When the upper surface of the ZnO substrate 1 is a Zn surface (0001), a flatter InN crystal layer 2 can be obtained. When the upper surface of the ZnO substrate 1 is an O surface (000-1), Zn atoms are not diffused to the InN crystal layer 2 side, so that the generation of p-type conduction can be suppressed. Since a surface cut off from a crystal surface several times is used as an upper surface, the generation of channeling can be prevented in forming an impurity diffusion layer 4 or the like. COPYRIGHT: (C)2005,JPO&NCIPI
|
