| 摘要 |
PROBLEM TO BE SOLVED: To reduce a write current and to ensure resistance to heat disturbance. SOLUTION: This magnetic memory comprises a magnetic resistance effect element 6 having a magnetization secured layer composed of a magnetic layer securing a direction of magnetization, a record layer composed of the magnetic layer varying the direction of magnetization, and an unmagnetized layer provided between the magnetization secured layer and the record layer; a write wiring in which an induced magnetic field caused by a current is generated, and the direction of magnetization of the record layer is reversible by the induced magnetic field; a yoke 4 which covers a write wiring, and comprises a gap 5 having a substantially same width as a width of the magnetic resistance effect element on an opposed side of the magnetic resistance effect element; and a read wiring connected electrically to one end of the magnetic resistance effect element. The width of the gap is 0.2 times or less of the width of the write wiring. COPYRIGHT: (C)2005,JPO&NCIPI
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