| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device that enable obtaining of accurate dielectric functions, each having little noise components to assess film qualities of silicon oxide films, even if seeking a plurality of dielectric functions. SOLUTION: The method of assessing a silicon oxide film is adapted for assessing the film quality of a silicon oxide film formed on a silicon substrate and comprises: a plurality of etching steps, in which the silicon oxide film formed on the silicon substrate is etched through a plurality of separated etching processes, while controlling the film thickness; a plurality of measuring steps, in which the reflectivity or transmissivity of the silicon oxide film during the plurality of etching steps is measured; and a computing step, in which a plurality of dielectric functions of the silicon oxide film, after the plurality of etching steps, have been computed, on the basis of a plurality of the reflectivities or transmissivities measured by the plurality of measuring steps, whereby the quality of the silicon oxide film is assessed, on the basis of the plurality of dielectric functions. COPYRIGHT: (C)2005,JPO&NCIPI
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