| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride single crystal ingot having a thickness of≥5 mm by vapor-phase growth using, as a seed crystal, a single crystal nitride semiconductor substrate, by which sticking of polycrystal on the side face of a nitride semiconductor single crystal ingot and the occurrence of strains or cracks caused by abnormal growth at the outermost peripheral part of a growth surface are eliminated, and nonuniformity in crystal quality caused as the result of change in growth position due to an increase in thickness is eliminated. SOLUTION: In the growth of the nitride semiconductor single crystal by vapor-phase growth, the sticking of polycrystal on the side face of the crystal is prevented by arranging a cover 16 for covering side face of the outer periphery of growth surface of a growing crystal, and at the same time, the growth surface is consistently kept at a constant position in a furnace by allowing a crystal rotating axis to retreat in concert with the growth speed. COPYRIGHT: (C)2005,JPO&NCIPI
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