发明名称 High-density metal capacitor using dual-damascene copper interconnect
摘要 An electronic structure having a first conductive layer provided by a dual damascene fabrication process; an etch-stop layer provided by the fabrication process, and electrically coupled with the first conductive layer, the etch-stop layer having a preselected dielectric constant and a predetermined geometry; and a second conductive layer, electrically coupled with the etch-stop layer. The structure can be, for example, a metal-insulator-metal capacitor, an antifuse, and the like.
申请公布号 US2005161765(A1) 申请公布日期 2005.07.28
申请号 US20050085866 申请日期 2005.03.22
申请人 BROADCOM CORPORATION 发明人 TSAU LIMING
分类号 H01L23/522;H01L23/525;H01L23/532;(IPC1-7):H01L29/00;H01L21/476 主分类号 H01L23/522
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