发明名称 Methods to make thick film single elements and arrays
摘要 A material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 mum to 100 mum. The at least one thick film element structure is bonded to a second substrate. Thereafter, the first substrate is removed from the at least one thick film element structure using a liftoff process which includes emitting, from a radiation source (such as a laser or other appropriate device), a beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the surface of the first substrate. The first substrate is substantially transparent at the wavelength of the beam, and the beam generates sufficient energy at the interface to break the attachment.
申请公布号 US2005162045(A1) 申请公布日期 2005.07.28
申请号 US20050084579 申请日期 2005.03.18
申请人 PALO ALTO RESEARCH CENTER INCORPORATED 发明人 XU BAOMIN;BUHLER STEVEN A.;WELSBERG MICHAEL C.;WONG WILLIAM S.;SOLBERG SCOTT E.;LITTAU KARL A.;FITCH JOHN S.;ELROD SCOTT A.
分类号 B41J2/16;H01L41/24;(IPC1-7):H01L41/08 主分类号 B41J2/16
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