| 摘要 |
Semi-insulating Group III nitride layers and methods of fabricating semi- insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping the Group III nitride layer wi th a deep level dopant, such as a deep level transition metal dopant. Such laye rs and/or method may also include doping a Group III nitride layer with a shall ow level dopant having a concentration of less than about 1.times. 1017 cm-3 an d doping the Group III nitride layer with a deep level transition metal dopant . The concentration of the deep level transition metal dopant is greater than a concentration of the shallow level p-type dopant.
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