| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CVD system capable of efficiently and inexpensively removing by-product, organic pollutants and particles to impair the productivity in a manufacturing step of silicon oxynitride (SiON) or silicon nitride (SiN) as a protective film of an organic EL element. <P>SOLUTION: By-product is removed by using NF<SB>3</SB>gas and a plasma generator attached to the CVD system, organic pollutants are removed by using O<SB>2</SB>gas and the plasma generator attached to the CVD system, and particles are removed by the minimum pressure increase and evacuation with N<SB>2</SB>gas, respectively. Since the plasma generator attached to the CVD system is used, the price of the system is reduced. Further, since NF<SB>3</SB>plasma can be directly supplied to a part where the by-product is generated, the by-product can efficiently be removed. Still further, since the particles are removed with the minimum pressure increased, the consumption of N<SB>2</SB>gas is minimized. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
