| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device, capable of decreasing an inter-wiring capacity and superior in mechanical strength. SOLUTION: An area comprising a void region 110 and an insulating film 105 is provided inside the same wiring layer, the entire region of wirings 108 in a region where the wiring distances are less than certain distances in the same wiring layer is the void region, and the void region is blocked by a single insulating film 109. COPYRIGHT: (C)2005,JPO&NCIPI |
