| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device which hardly causes the generation of a local potential barrier at a transfer channel, is enhanced in yield, improved in the withstand voltage of an insulating film between electrodes, and preventive in light leak-in caused by the local thinning of a light shielding film and the stepped-cut of metal wiring, and its manufacturing method. SOLUTION: The solid-state imaging device has a semiconductor substrate (1), a photoelectric conversion part (8) formed on the semiconductor substrate (1), a gate insulating film (27) that covers the photoelectric conversion part (8) and is formed on the semiconductor substrate (1), a vertical transfer part (4) that transfers electric charge generated in the photoelectric conversion part (8) in a vertical direction, and multi-layer transfer gate electrodes (12, 13) for transferring the electric charge in the vertical transfer part (4), and at least one layer in the multi-layer transfer gate electrodes (12, 13) is further formed of an impurity doped amorphous silicon film of two or more layers different in impurity concentrations. COPYRIGHT: (C)2005,JPO&NCIPI
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