| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition system for depositing a thin film on the inner surface of a hollow vessel by a plasma assisted CVD (chemical vapor deposition) method where, even if the shapes of the objects are various, a uniform thin film can be deposited on each inner surface thereof, further, even in the case, owing to film deposition for a long period of time, the blowout port of gas is gradually reduced, and the flow rate of a gaseous starting material starts to be reduced, an expected gas flow rate can be secured only by exchanging a cover tube with the new one, and a uniform thin film can be deposited on the inner surface of a hollow vessel. SOLUTION: A gas introduction tube 6 attached inside a film deposition chamber has a double structure of a cylindrical gas introduction main tube flowing a gaseous starting material and a cylindrical cover tube fitted integrally thereto in an attachable/detachable state so as to cover the outer circumference thereof. The opening of its tip forms a blowout port of a gaseous starting material, further, the same place on the side part of each tube is provided with openings 9, respectively, and the pair of the openings are integrated to form a blowout port of a gaseous starting material. COPYRIGHT: (C)2005,JPO&NCIPI
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