Bidirectional high voltage switching device and energy recovery circuit having the same

摘要

Provided are a bi-directional high voltage switching device that includes an N-channel double diffused metal oxide semiconductor field effect transistor (DMOS FET) and a P-channel DMOS FET, each conducting current bi-directionally, and an energy recovery circuit that reduces the amount of energy consumed when charging or discharging a load capacitor by efficiently driving the bi-directional high voltage switching device; where the N-channel symmetric DMOS FET and the P-channel symmetric DMOS FET are connected to each other in parallel; and the energy recovery circuit includes a pull-up device, a pull-down device, an energy recovery capacitor, and a bi-directional high voltage switching device.