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发明名称
DRAM cell including MOS capacitor and method for manufacturing the same
摘要
申请公布号
KR100504194(B1)
申请公布日期
2005.07.28
申请号
KR20020080298
申请日期
2002.12.16
申请人
发明人
分类号
H01L27/108;H01L21/8242;(IPC1-7):H01L27/108
主分类号
H01L27/108
代理机构
代理人
主权项
地址
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