| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with TiN film anomalous growth substance therein suppressed even when a film forming temperature during CVD is lowered to ≤450°C or further to ≤400°C, and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing a semiconductor device having a TiN film comprises a film forming step of forming a TiN film by CVD, an annealing step of heat-treating the TiN film in an NH<SB>3</SB>gas atmosphere, an NH<SB>3</SB>gas purging step of purging the NH<SB>3</SB>gas, and further, steps of repeating more than once the film forming step, the annealing step, and the NH<SB>3</SB>gas purging step. In the film forming step, material gases are a titanium halide gas and NH<SB>3</SB>gas, and the film is formed at 300-450°C. The TiN film gains a thickness of 1-5 nm in each of the film forming steps. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
