| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means for improving the efficiency of a light emitting device using I-VI group compound semiconductors PbTe, SnTe, PbSe, SnSe or the like or their mixed crystals PbSnTe, PbSnSeTe, PbEuTe, or the like and capable of generating light in an infrared area of about 3 to 20μm. <P>SOLUTION: The efficiency of light emission is improved by improving the efficiency of radiative quantum efficiency by adding Bi, which acts as the light emitting center of a pair of donor acceptors, to an active layer of the light emitting device and improving the efficiency of electron injection by adding In of high concentration to an electron injection layer for injecting electrons into the active layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
