| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light emission efficiency of a semiconductor light emitting element including a InAlGaN semiconductor . <P>SOLUTION: The semiconductor light emitting element 1 is provided with a light emitting region 3, a first Al<SB>X1</SB>Ga<SB>1-X1</SB>N semiconductor (0≤X1≤1) layer 5, and a second Al<SB>X2</SB>Ga<SB>1-X2</SB>N semiconductor (0≤X2≤1) layer 7. In this light emitting element 1, the light emitting region 3 is formed of group III nitride semiconductor and also includes InAlGaN semiconductor. A p-type dopant, for example, magnesium (Mg) is doped to the first Al<SB>X1</SB>Ga<SB>1-X1</SB>N semiconductor layer 5, and this layer 5 is provided on the light emitting region 3. The second Al<SB>X2</SB>Ga<SB>1-X2</SB>N semiconductor layer 7 has the p-type dopant concentration lower than the p-type dopant of the first Al<SB>X1</SB>Ga<SB>1-X1</SB>N semiconductor layer 5. The second Al<SB>X2</SB>Ga<SB>1-X2</SB>N semiconductor layer 7 is provided between the light emitting region 3 and the first Al<SB>X1</SB>Ga<SB>1-X1</SB>N semiconductor layer 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
