发明名称 |
Semiconductor integrated circuit |
摘要 |
In a semiconductor integrated circuit of the present invention, the main circuit 2 includes MOS transistors in which the source and the substrate are separated from each other. The substrate potential control circuit 1 controls the substrate potential of the MOS transistors of the main circuit 2 so that the actual saturation current value of the MOS transistors of the main circuit 2 is equal to the target saturation current value Ids under the operating power supply voltage Vdd of the main circuit 2 . Therefore, it is possible to suppress variations in the operation speed even if the operating power supply voltage of the semiconductor integrated circuit is reduced.
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申请公布号 |
US2005162212(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20040511165 |
申请日期 |
2004.10.14 |
申请人 |
SAKIYAMA SHIRO;KINOSHITA MASAYOSHI;SUMITA MASAYA |
发明人 |
SAKIYAMA SHIRO;KINOSHITA MASAYOSHI;SUMITA MASAYA |
分类号 |
G05F1/565;H03K19/003;(IPC1-7):H03K3/01 |
主分类号 |
G05F1/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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