| 摘要 |
A plasma etch reactor 20 includes a upper electrode 24 , a lower electrode 24 , a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the lower electrode 28 is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber 22 is configured with a solid source 50 of gaseous species and a protruding baffle 40 . A nozzle 36 provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer 48 . The configuration of the plasma etch reactor 20 enhances the range of densities for the plasma in the reactor 20 , which range can be selected by adjusting more of the power supplies 30, 32.
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