PROCESS FOR PRODUCING MONOCRYSTAL THIN FILM AND MONOCRYSTAL THIN FILM DEVICE

摘要

A process for producing a high-purity monocrystal silicon film exhibiting good lift-off, and a device obtained through that process. A monocrystal silicon substrate (cast Si substrate) (201) is prepared and an epitaxial sacrifice layer (202) is formed thereon. Subsequently, a monocrystal silicon film (203) is epitaxially grown on the sacrifice layer (202) quickly by RVD and then the sacrifice layer (202) is etched to obtain a solar cell power generation layer monocrystal silicon thin film (204).