发明名称 ELECTRIC CIRCUIT
摘要 The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.
申请公布号 SG112868(A1) 申请公布日期 2005.07.28
申请号 SG20020007890 申请日期 2002.12.31
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 HAJIME KIMURA;YASUKO WATANABE
分类号 G11C27/02;H03F1/30;H03F3/08;H03F3/45;H03F3/50;H03K19/003;(IPC1-7):H03F1/00 主分类号 G11C27/02
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