发明名称 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an electrostatic discharge protection circuit which has a low leak current, a high breakdown voltage, high current driving capability, and a low parasitic capacitance. SOLUTION: The electrostatic discharge protection circuit includes a first transistor group coupled to a first operating voltage and a third operating voltage, a second transistor group coupled to a second operating voltage and a fourth operating voltage, a first detector circuit which is electrically connected between the first operating voltage and the second operating voltage and detects an electrostatic voltage to generate a first trigger signal, a first electrostatic discharge circuit electrically connected between the first operating voltage and the second operating voltage, a second detector circuit which is electrically connected between the third operating voltage and the fourth operating voltage and detects an electrostatic voltage to generate a second trigger signal, and a second electrostatic discharge circuit electrically connected between the third operating voltage and the fourth operating voltage. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005203736(A) 申请公布日期 2005.07.28
申请号 JP20040284478 申请日期 2004.09.29
申请人 REALTEK SEMICONDUCTOR CORP 发明人 YEH TA-HSUN;LIN YUNG-HAO;JEAN YUH-SHENG
分类号 H01L29/70;H01L21/33;H01L21/822;H01L27/02;H01L27/04;H02H9/00;(IPC1-7):H01L21/822 主分类号 H01L29/70
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