| 摘要 |
A dielectric layer containing a Zr-Sn-Ti-O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO<SUB>2</SUB>. In an embodiment, forming the Zr-Sn-Ti-O film on a substrate includes depositing materials of the Zr-Sn-Ti-O film substantially as atomic monolayers. In an embodiment, electronic devices include a dielectric layer having a Zr-Sn-Ti-O film such that Zr-Sn-Ti-O material is configured as substantially atomic monolayers. Dielectric layers containing such Zr-Sn-Ti-O films may have minimal reactions with a silicon substrate or other structures during processing.
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