| 发明名称 |
Method for manufacturing a semiconductor device |
| 摘要 |
A method for manufacturing a MOS transistors in a semiconductor device includes the step of implanting a dopant in a channel layer or source/drain regions by using a multi-step implantation and an associated multi-step heat treatment, wherein the multi-step implantation includes a number of steps of implantation each for implanting the dopant at a dosage lower than 1x10<SUP>13</SUP>/cm<SUP>2</SUP>. The total dosage of the multi-step implantation ranges between 1x10<SUP>13</SUP>/cm<SUP>2 </SUP>and 3x10<SUP>13</SUP>/cm<SUP>2</SUP>.
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| 申请公布号 |
US2005164438(A1) |
申请公布日期 |
2005.07.28 |
| 申请号 |
US20050043085 |
申请日期 |
2005.01.27 |
| 申请人 |
ELPIDA MEMORY, INC. |
发明人 |
OKONOGI KENSUKE;OYU KIYONORI |
| 分类号 |
H01L21/225;H01L21/265;H01L21/28;H01L21/336;H01L21/8238;H01L21/8242;H01L21/8244;H01L27/092;H01L27/108;H01L27/11;H01L29/78;(IPC1-7):H01L21/336;H01L21/823;H01L21/76 |
主分类号 |
H01L21/225 |
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