| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bit cell array for preventing a coupling phenomenon in a read-only memory. <P>SOLUTION: A bit cell array comprises multiple bit lines formed in a first direction, multiple ground lines formed in a second direction perpendicular to the first direction, multiple word lines formed in a zigzag manner with respect to the ground lines in the second direction, and multiple ROM bit cells formed at some intersections of the bit lines and the word lines. Meanwhile, the ROM bit cells are arranged in a zigzag manner with respect to adjacent bit lines. Each of the ROM bit cells comprises a drain terminal connected to one of the bit lines, a gate terminal connected to one of the word lines, and a source terminal connected to one of the ground lines. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
