| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent such a reaction of tantalum on oxygen generated when dry-etching a tantalum film or the alloy and oxide films thereof under the situation of generating oxygen that a tantalum oxide redeposits on the sidewall of the etched film. <P>SOLUTION: A dry-etching method includes the process wherein oxygen is generated while dry-etching a tantalum film or a film containing tantalum as its main component which is the etched film formed on a substrate 100, and the dry-etching method is performed by using a gas containing boron. Consequently, when etching, e.g., a tantalum oxide film 105 as a tantalum film or a film having tantalum as its main component, when etching a film having an underlaid oxide film, and in the like case, i.e., when dry-etching a film under an oxygen generating situation, boron is so forced to react on oxygen by utilizing the reducing reaction of boron as to make suppressible the formation of a tantalum oxide layer generated by tantalum reacting on oxygen. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
