| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon ingot containing oxygen in a low concentration by using a reducing gas except hydrogen. <P>SOLUTION: The method for manufacturing the silicon ingot has a process (1) for melting a silicon material and a process (2) for crystallizing the molten silicon material. In either of the processes mentioned above, the molten silicon material is exposed to a reducing gas (e.g., a mixed gas of ammonia and an inert gas) not substantially containing hydrogen. The concentration of oxygen contained in the molten silicon material can be reduced by exposing the molten silicon material to the reducing gas. Consequently, the silicon ingot in which the concentration of oxygen is low can be manufactured. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
