| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide polishing solution for CMP and a polishing method for carrying out high planarization and for suppressing dishing or sinning without lowering a polishing speed at the time of forming the embedded wiring(pattern) of a metallic film by a CMP method. <P>SOLUTION: At the time of forming a conductor embedded wiring in a semiconductor integrated circuit, a first process (1) to polish the deposition film of a conductor to the middle by using first polishing solution containing abrasive grains, an oxidant for oxidizing a conductor, benzotriazol or its dielectric, and a second process (2) for polishing the residual deposition film of the conductor by using a second polishing solution containing the abrasive grains, an oxidant for oxidizing the conductor and a compound having an amino-triazole frame are sequentially performed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
