| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device ensuring higher reliability of solder joining part between an insulating substrate and a metal base plate. SOLUTION: In the metal base plate 110, a low linear expansion material 114 having the linear expansion coefficient equivalent to or nearer to that of the insulating substrate 4 is arranged at the areas corresponding at least to the four corners of insulating substrate 4. In the solder joining part of the insulating substrate 4 and metal base plate 110, a shearing stress by heat cycle can be alleviated and generation of solder crack can be suppressed. COPYRIGHT: (C)2005,JPO&NCIPI |
