发明名称 LEVEL SHIFT CIRCUIT
摘要 PROBLEM TO BE SOLVED: To perform stable operation using a low voltage without increasing power consumption even if a threshold voltage of a transistor is varied by temperature or production process variations. SOLUTION: The threshold voltage of N-type high-voltage transistors N5, N6, to whose gates the voltage of a low-voltage supply VDD is applied, is set low. An input signal IN powered by the low-voltage supply VDD is input to the gate of N-type transistors N1, N2 by way of inverters INV1, INV2. Therefore, even if the potentials at nodes W3 and W4 exceed the voltage of the low-voltage supply VDD, a reverse current flow from the nodes W3 and W4 via parasitic diodes within the inverters INV1, INV2 into the low-voltage supply VDD is prevented. N-type transistors N3, N4 whose gates are fixed to the low-voltage supply VDD, are disposed between the two N-type transistors N5, N1 and two N-type transistors N6, N2 respectively, thereby preventing the breakdown of the N-type transistors N1, N2. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005204281(A) 申请公布日期 2005.07.28
申请号 JP20040335785 申请日期 2004.11.19
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MAEDE MASATO;NOJIRI HISANORI;GION MASAHIRO;KINUYAMA SHINJI
分类号 H03K19/0185;(IPC1-7):H03K19/018 主分类号 H03K19/0185
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